ST STP11N65M5

ST · FETs & Power MOSFETs · MPN STP11N65M5

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)480mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)644pF
TypeN-Channel

Technical details

N-Channel 650V 9A 85W Through Hole TO-220

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