ST STP11N52K3

ST · FETs & Power MOSFETs · MPN STP11N52K3

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Specifications

Drain to Source Voltage525V
Gate Charge(Qg)51nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation125W
RDS(on)510mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.4nF

Technical details

525V 10A 4.5V 125W 510mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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