ST STP110N8F7

ST · FETs & Power MOSFETs · MPN STP110N8F7

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Specifications

Gate Charge(Qg)46.8nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)653pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation170W
Reverse Transfer Capacitance (Crss@Vds)57pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.435nF
TypeN-Channel

Technical details

80V 80A 4.5V 170W 7.5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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