ST STP110N8F6

ST · FETs & Power MOSFETs · MPN STP110N8F6

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Specifications

Gate Charge(Qg)150nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.13nF
TypeN-Channel

Technical details

N-Channel 80V 110A 200W Through Hole TO-220

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