ST STP110N7F6

ST · FETs & Power MOSFETs · MPN STP110N7F6

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage68V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation176W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.85nF
TypeN-Channel

Technical details

N-Channel 68V 110A 176W Through Hole TO-220

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