ST STP110N10F7

ST · FETs & Power MOSFETs · MPN STP110N10F7

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Specifications

Gate Charge(Qg)72nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)5.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.117nF

Technical details

100V 110A 2.5V 150W 5.1mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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