ST STP10P6F6

ST · FETs & Power MOSFETs · MPN STP10P6F6

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Specifications

Gate Charge(Qg)6.4nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)130mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)340pF

Technical details

60V 10A 2V 30W 130mΩ@10V 1 P-Channel TO-220 Single FETs, MOSFETs RoHS

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