ST STP10NK80Z

ST · FETs & Power MOSFETs · MPN STP10NK80Z

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Specifications

Gate Charge(Qg)72nC@640V
Drain to Source Voltage800V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation160W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)780mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.18nF

Technical details

N-Channel 800V 9A 160W Through Hole TO-220

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