ST STP10NK60Z

ST · FETs & Power MOSFETs · MPN STP10NK60Z

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)90nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

600V 10A 4.5V 115W 750mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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