ST STP10N95K5

ST · FETs & Power MOSFETs · MPN STP10N95K5

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Specifications

Gate Charge(Qg)22nC@760V
Drain to Source Voltage950V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)0.6pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)630pF

Technical details

N-Channel 950V 8A 130W Through Hole TO-220

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