ST STP10N80K5

ST · FETs & Power MOSFETs · MPN STP10N80K5

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Specifications

Gate Charge(Qg)22nC
Drain to Source Voltage800V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)0.8pF
RDS(on)470mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)635pF

Technical details

N-Channel 800V 9A 130W Through Hole TO-220

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