ST · FETs & Power MOSFETs · MPN STP10N60M2
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| Gate Charge(Qg) | 13.5nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 85W |
| RDS(on) | 550mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 0.84pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 400pF |
650V 7.5A 3V 85W 550mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS