ST STP10LN80K5

ST · FETs & Power MOSFETs · MPN STP10LN80K5

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)43pF
Current - Continuous Drain(Id)8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)250fF
RDS(on)630mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)427pF
TypeN-Channel

Technical details

800V 8A 5V 110W 630mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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