ST STP100NF04

ST · FETs & Power MOSFETs · MPN STP100NF04

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Specifications

Gate Charge(Qg)150nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.3nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)4.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.1nF
TypeN-Channel

Technical details

N-Channel 40V 120A 300W Through Hole TO-220

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