ST · FETs & Power MOSFETs · MPN STP100N6F7
No reviews yet — be the first to review ST STP100N6F7.
| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF |
| RDS(on) | 5.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.98nF |
N-Channel 60V 100A 125W Through Hole TO-220