ST STP100N10F7

ST · FETs & Power MOSFETs · MPN STP100N10F7

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Specifications

Gate Charge(Qg)61nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)823pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.369nF
TypeN-Channel

Technical details

N-Channel 100V 80A 150W Through Hole TO-220

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