ST · FETs & Power MOSFETs · MPN STO68N65DM6
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 80nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 258pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 240W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| RDS(on) | 65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.528nF |
650V 55A 4.75V 240W 65mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS