ST · FETs & Power MOSFETs · MPN STO67N60DM6
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| Gate Charge(Qg) | 72.5nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 280pF |
| Current - Continuous Drain(Id) | 58A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 240W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 59mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.4nF |
| Type | N-Channel |
600V 58A 4.75V 240W 59mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS