ST · FETs & Power MOSFETs · MPN STO65N60DM6
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 65.2nC@10V |
| Output Capacitance(Coss) | 125pF |
| Current - Continuous Drain(Id) | 46A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 320W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 76mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.5nF |
| Type | N-Channel |
N-Channel 600V 46A 320W TO-LL