ST STO47N60M6

ST · FETs & Power MOSFETs · MPN STO47N60M6

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)52.2nC@10V
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation255W
Reverse Transfer Capacitance (Crss@Vds)3.7pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.34nF
TypeN-Channel

Technical details

600V 36A 4.75V 255W 80mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS

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