ST STN6N60M2

ST · FETs & Power MOSFETs · MPN STN6N60M2

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)6.2nC
Output Capacitance(Coss)12.5pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation6W
Reverse Transfer Capacitance (Crss@Vds)3.3pF
RDS(on)1.25Ω@10V
Number1 N-channel
Input Capacitance(Ciss)220pF
TypeN-Channel

Technical details

600V 5.5A 4V 6W 1.25Ω@10V 1 N-channel N-Channel SOT-223-2 Single FETs, MOSFETs RoHS

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