ST STN1NK80Z

ST · FETs & Power MOSFETs · MPN STN1NK80Z

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Specifications

Gate Charge(Qg)7.7nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)26pF
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)6.7pF
RDS(on)16Ω@10V
Number1 N-channel
Input Capacitance(Ciss)160pF
Vgs±30V

Technical details

N-Channel 800V 0.25A 2.5W Surface Mount SOT-223

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