ST STN1NK60Z

ST · FETs & Power MOSFETs · MPN STN1NK60Z

No reviews yet — be the first to review ST STN1NK60Z.

Specifications

Gate Charge(Qg)6.9nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation3.3W
Reverse Transfer Capacitance (Crss@Vds)2.8pF
RDS(on)15Ω@10V
Number1 N-channel
Input Capacitance(Ciss)94pF

Technical details

N-Channel 600V 0.3A 3.3W Surface Mount SOT-223

Related FETs & Power MOSFETs