ST STN1NF10

ST · FETs & Power MOSFETs · MPN STN1NF10

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Specifications

Gate Charge(Qg)6nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W
RDS(on)800mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)9pF
Input Capacitance(Ciss)105pF
TypeN-Channel

Technical details

100V 1A 4V 2.5W 800mΩ@10V N-Channel SOT-223 Single FETs, MOSFETs RoHS

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