ST STN1HNK60

ST · FETs & Power MOSFETs · MPN STN1HNK60

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)23.5pF
Current - Continuous Drain(Id)400mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation3.3W
Reverse Transfer Capacitance (Crss@Vds)3.8pF
RDS(on)8.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)156pF
TypeN-Channel

Technical details

N-Channel 600V 0.4A 3.3W Surface Mount SOT-223

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