ST STL8N10F7

ST · FETs & Power MOSFETs · MPN STL8N10F7

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Specifications

Gate Charge(Qg)25nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.64nF
TypeN-Channel

Technical details

N-Channel 100V 35A 50W Surface Mount PowerVDFN-8

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