ST STL57N65M5

ST · FETs & Power MOSFETs · MPN STL57N65M5

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Specifications

Gate Charge(Qg)96nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)22.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation189W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)69mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.2nF

Technical details

N-Channel 650V 22.5A 189W Surface Mount PowerFLAT(8x8)

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