ST STL4N10F7

ST · FETs & Power MOSFETs · MPN STL4N10F7

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Specifications

Gate Charge(Qg)7.8nC@50V
Drain to Source Voltage100V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation2.9W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)408pF

Technical details

100V 4.5A 4.5V 2.9W 70mΩ@10V 1 N-channel PowerFLAT-8(5x6) Single FETs, MOSFETs RoHS

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