ST STL3NM60N

ST · FETs & Power MOSFETs · MPN STL3NM60N

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Specifications

Gate Charge(Qg)9.5nC@480V
Drain to Source Voltage600V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)188pF
TypeN-Channel

Technical details

600V 2.2A 4V 2W 1.8Ω@10V 1 N-channel N-Channel PowerFLAT-8(3.3x3.3) Single FETs, MOSFETs RoHS

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