ST STL3N10F7

ST · FETs & Power MOSFETs · MPN STL3N10F7

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Specifications

Gate Charge(Qg)7.8nC
Drain to Source Voltage100V
Output Capacitance(Coss)112pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2.4W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)408pF
TypeN-Channel

Technical details

100V 4A 2.4W 70mΩ@10V 1 N-channel N-Channel WDFN-6-Power Single FETs, MOSFETs RoHS

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