ST STL33N65M2

ST · FETs & Power MOSFETs · MPN STL33N65M2

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Specifications

Gate Charge(Qg)41.5nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)154mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.79nF
TypeN-Channel

Technical details

650V 20A 4V 150W 154mΩ@10V 1 N-channel N-Channel VDFN-8-Power Single FETs, MOSFETs RoHS

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