ST STL33N60DM2

ST · FETs & Power MOSFETs · MPN STL33N60DM2

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Specifications

Gate Charge(Qg)43nC@480V
Drain to Source Voltage650V
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)115mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.87nF

Technical details

650V 21A 3V 150W 115mΩ@10V 1 N-channel SMD Single FETs, MOSFETs RoHS

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