ST · FETs & Power MOSFETs · MPN STL19N60M6
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| Gate Charge(Qg) | 16.8nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 45pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -40℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 90W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 308mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 650pF |
| Type | N-Channel |
600V 11A 4.75V 90W 308mΩ@10V 1 N-channel N-Channel PowerVDFN-8 Single FETs, MOSFETs RoHS