ST STL19N60M2

ST · FETs & Power MOSFETs · MPN STL19N60M2

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Specifications

Gate Charge(Qg)21.5nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)308mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)791pF
TypeN-Channel

Technical details

N-Channel 600V 11A 90W Surface Mount VDFN-8

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