ST STL18N65M2

ST · FETs & Power MOSFETs · MPN STL18N65M2

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Specifications

Gate Charge(Qg)21.5nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)365mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)764pF
TypeN-Channel

Technical details

N-Channel 650V 8A 57W Surface Mount VDFN-8-Power

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