ST STL18N60M2

ST · FETs & Power MOSFETs · MPN STL18N60M2

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Specifications

Gate Charge(Qg)21.5nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)308mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)791pF
TypeN-Channel

Technical details

600V 9A 4V 57W 308mΩ@10V 1 N-channel N-Channel VDFN-8-Power Single FETs, MOSFETs RoHS

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