ST STL13NM60N

ST · FETs & Power MOSFETs · MPN STL13NM60N

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)30nC@10V
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3W;90W
RDS(on)385mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)790pF

Technical details

600V 10A 4V 385mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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