ST STL13N65M2

ST · FETs & Power MOSFETs · MPN STL13N65M2

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)17nC@10V
Output Capacitance(Coss)27.5pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation52W
RDS(on)475mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.1pF
Number1 N-channel
Input Capacitance(Ciss)590pF
TypeN-Channel

Technical details

650V 6.5A 4V 52W 475mΩ@10V 1 N-channel N-Channel VDFN-8-Power Single FETs, MOSFETs RoHS

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