ST STL12N60M6

ST · FETs & Power MOSFETs · MPN STL12N60M6

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)12.3nC@10V
Current - Continuous Drain(Id)6.4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)4.5pF
RDS(on)490mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)452pF
TypeN-Channel

Technical details

600V 6.4A 4.75V 48W 490mΩ@10V 1 N-channel N-Channel VDFN-8-Power Single FETs, MOSFETs RoHS

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