ST STL12N60M2

ST · FETs & Power MOSFETs · MPN STL12N60M2

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)16nC@10V
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
RDS(on)495mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)538pF
TypeN-Channel

Technical details

600V 6.5A 4V 52W 495mΩ@10V 1 N-channel N-Channel VDFN-8-Power Single FETs, MOSFETs RoHS

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