ST STL11N65M5

ST · FETs & Power MOSFETs · MPN STL11N65M5

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)17nC@10V
Current - Continuous Drain(Id)8.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)530mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)644pF
TypeN-Channel

Technical details

650V 8.5A 5V 70W 530mΩ@10V 1 N-channel N-Channel VDFN-8-Power Single FETs, MOSFETs RoHS

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