ST STL10N65M2

ST · FETs & Power MOSFETs · MPN STL10N65M2

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage650V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)0.9pF
RDS(on)850mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)310pF

Technical details

N-Channel 650V 4.5A 48W Surface Mount PQFN-8(5x6)

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