ST · FETs & Power MOSFETs · MPN STL10N60M6
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 8.8nC@10V |
| Output Capacitance(Coss) | 26.2pF |
| Current - Continuous Drain(Id) | 5.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF |
| RDS(on) | 660mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 338pF |
| Type | N-Channel |
600V 5.5A 4.75V 48W 660mΩ@10V 1 N-channel N-Channel VDFN-8-Power Single FETs, MOSFETs RoHS