ST STL10N60M6

ST · FETs & Power MOSFETs · MPN STL10N60M6

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)8.8nC@10V
Output Capacitance(Coss)26.2pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)3.8pF
RDS(on)660mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)338pF
TypeN-Channel

Technical details

600V 5.5A 4.75V 48W 660mΩ@10V 1 N-channel N-Channel VDFN-8-Power Single FETs, MOSFETs RoHS

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