ST STK820

ST · FETs & Power MOSFETs · MPN STK820

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)9.5nC@4.5V
Current - Continuous Drain(Id)21A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation5.2W
RDS(on)7.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.425nF

Technical details

25V 21A 2.5V 5.2W 7.3mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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