ST STI6N80K5

ST · FETs & Power MOSFETs · MPN STI6N80K5

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)700fF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)270pF

Technical details

N-Channel 800V 4.5A 85W Through Hole TO-262(I2PAK)

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