ST STI400N4F6

ST · FETs & Power MOSFETs · MPN STI400N4F6

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Specifications

Gate Charge(Qg)377nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation300W
RDS(on)1.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)20nF

Technical details

40V 120A 3V 300W 1.7mΩ@10V 1 N-channel I2PAK(TO-262) Single FETs, MOSFETs RoHS

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