ST · FETs & Power MOSFETs · MPN STI34N65M5
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| Gate Charge(Qg) | 62.5nC@10V |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 190W |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
28A 5V 190W 110mΩ@10V 1 N-channel I2PAKFP(TO-281) Single FETs, MOSFETs RoHS