ST · FETs & Power MOSFETs · MPN STI33N60M6
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| Gate Charge(Qg) | 33.4nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.515nF |
| Type | N-Channel |
600V 25A 4.75V 190W 125mΩ@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs RoHS