ST · FETs & Power MOSFETs · MPN STI32N65M5
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| Gate Charge(Qg) | 72nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 24A |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 150W |
| RDS(on) | 119mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.32nF |
650V 24A 150W 119mΩ@10V 1 N-channel I2PAK Single FETs, MOSFETs RoHS