ST STI30N65M5

ST · FETs & Power MOSFETs · MPN STI30N65M5

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Specifications

Drain to Source Voltage-
Gate Charge(Qg)64nC@10V
Current - Continuous Drain(Id)22A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation140W
RDS(on)139mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.88nF

Technical details

22A 5V 140W 139mΩ@10V 1 N-channel I2PAK Single FETs, MOSFETs RoHS

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